FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 800mV @ 0.5nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V, Stromaufnahme (Id) - Max: 250pA, Spannung - Cutoff (VGS aus) @ Id: 10V @ 500pA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Drain-Source-Spannung (Vdss): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V, Stromaufnahme (Id) - Max: 30mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 4V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 10nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 3V @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 6V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 4V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 35V, Drain-Source-Spannung (Vdss): 35V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 2.5V @ 1nA,