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Transistoren - FETs, MOSFETs - Arrays

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  • Transistoren - FETs, MOSFETs - Arrays
TC6320TG-G
Microchip Technology

TC6320TG-G

Teilbestand: 68318

FET-Typ: N and P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 7 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA,

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TC7920K6-G
Microchip Technology

TC7920K6-G

Teilbestand: 49864

FET-Typ: 2 N and 2 P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 10 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2.4V @ 1mA,

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TD9944TG-G
Microchip Technology

TD9944TG-G

Teilbestand: 65575

FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 240V, Rds On (Max) @ ID, Vgs: 6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA,

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TC2320TG-G
Microchip Technology

TC2320TG-G

Teilbestand: 63061

FET-Typ: N and P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 7 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA,

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TC6320K6-G
Microchip Technology

TC6320K6-G

Teilbestand: 71235

FET-Typ: N and P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 7 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA,

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TC8020K6-G-M937
Microchip Technology

TC8020K6-G-M937

Teilbestand: 11166

FET-Typ: 6 N and 6 P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 8 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2.4V @ 1mA,

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TC6321T-V/9U
Microchip Technology

TC6321T-V/9U

Teilbestand: 64633

FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 200V, Strom - Dauerentnahme (Id) bei 25°C: 2A (Ta), Rds On (Max) @ ID, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA, 2.4V @ 1mA,

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DN2625DK6-G
Microchip Technology

DN2625DK6-G

Teilbestand: 28122

FET-Typ: 2 N-Channel (Dual), FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 250V, Strom - Dauerentnahme (Id) bei 25°C: 1.1A, Rds On (Max) @ ID, Vgs: 3.5 Ohm @ 1A, 0V,

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TC6215TG-G
Microchip Technology

TC6215TG-G

Teilbestand: 66450

FET-Typ: N and P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 150V, Rds On (Max) @ ID, Vgs: 4 Ohm @ 2A, 10V, Vgs(th) (Max) @ ID: 2V @ 1mA,

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TC8020K6-G
Microchip Technology

TC8020K6-G

Teilbestand: 8617

FET-Typ: 6 N and 6 P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 8 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2.4V @ 1mA,

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TC1550TG-G
Microchip Technology

TC1550TG-G

Teilbestand: 16138

FET-Typ: N and P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 500V, Rds On (Max) @ ID, Vgs: 60 Ohm @ 50mA, 10V, Vgs(th) (Max) @ ID: 4V @ 1mA,

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LP1030DK1-G
Microchip Technology

LP1030DK1-G

Teilbestand: 2955

FET-Typ: 2 P-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 300V, Rds On (Max) @ ID, Vgs: 180 Ohm @ 20mA, 7V, Vgs(th) (Max) @ ID: 2.4V @ 1mA,

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LN100LA-G
Microchip Technology

LN100LA-G

Teilbestand: 2875

FET-Typ: 2 N-Channel (Cascoded), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1200V (1.2kV), Rds On (Max) @ ID, Vgs: 3000 Ohm @ 2mA, 2.8V, Vgs(th) (Max) @ ID: 1.6V @ 10µA,

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TC8220K6-G
Microchip Technology

TC8220K6-G

Teilbestand: 47950

FET-Typ: 2 N and 2 P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Rds On (Max) @ ID, Vgs: 6 Ohm @ 1A, 10V, Vgs(th) (Max) @ ID: 2.4V @ 1mA,

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