FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Drain-Source-Spannung (Vdss): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Drain-Source-Spannung (Vdss): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 12mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Drain-Source-Spannung (Vdss): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 80mA @ 5V, Spannung - Cutoff (VGS aus) @ Id: 10V @ 1µA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 3V @ 10nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 800mV @ 10nA,