FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 50V, Strom - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 100nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 600mV @ 1nA,
FET-Typ: 2 N-Channel (Dual), Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 12mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 10nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1.8V @ 1µA,
FET-Typ: 2 N-Channel (Dual), Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 3V @ 1nA,
FET-Typ: 2 N-Channel (Dual), Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 1nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 10nA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 5V @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 4V @ 3nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1.5V @ 3nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 2.5V @ 1nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 2V @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 10nA,