Teilbestand: 141777
FET-Typ: N and P-Channel Complementary, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 40V, Strom - Dauerentnahme (Id) bei 25°C: 5.2A (Ta), 4.7A (Ta), Rds On (Max) @ ID, Vgs: 50 mOhm @ 4.5A, 10V, 60 mOhm @ 3.8A, 10V, Vgs(th) (Max) @ ID: 1V @ 250mA (Min),