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Transistoren - Bipolar (BJT) - Arrays, vorgespannt

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  • Transistoren - Bipolar (BJT) - Arrays, vorgespannt
NSBC114YDXV6T1G
ON Semiconductor

NSBC114YDXV6T1G

Teilbestand: 163781

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5237DW1T1
ON Semiconductor

MUN5237DW1T1

Teilbestand: 1518

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5335DW1T2G
ON Semiconductor

MUN5335DW1T2G

Teilbestand: 164842

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSVB114YPDXV6T1G
ON Semiconductor

NSVB114YPDXV6T1G

Teilbestand: 116749

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
SMUN5115DW1T1G
ON Semiconductor

SMUN5115DW1T1G

Teilbestand: 128974

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBC124XPDXV6T1G
ON Semiconductor

NSBC124XPDXV6T1G

Teilbestand: 1461

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSVBC114EPDXV6T1G
ON Semiconductor

NSVBC114EPDXV6T1G

Teilbestand: 131643

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wunschzettel
MUN5312DW1T1
ON Semiconductor

MUN5312DW1T1

Teilbestand: 1526

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
MUN5236DW1T1G
ON Semiconductor

MUN5236DW1T1G

Teilbestand: 90859

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 100 kOhms, Widerstand - Emitterbasis (R2): 100 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5112DW1T1G
ON Semiconductor

MUN5112DW1T1G

Teilbestand: 58075

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
NSBC123TDP6T5G
ON Semiconductor

NSBC123TDP6T5G

Teilbestand: 120018

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSTB1003DXV5T1G
ON Semiconductor

NSTB1003DXV5T1G

Teilbestand: 1527

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual),

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EMA6DXV5T5G
ON Semiconductor

EMA6DXV5T5G

Teilbestand: 1485

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBC114EPDXV6T1G
ON Semiconductor

NSBC114EPDXV6T1G

Teilbestand: 138112

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wunschzettel
MUN5114DW1T1G
ON Semiconductor

MUN5114DW1T1G

Teilbestand: 128956

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
UMA4NT1
ON Semiconductor

UMA4NT1

Teilbestand: 1408

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBA143ZDXV6T1
ON Semiconductor

NSBA143ZDXV6T1

Teilbestand: 1412

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
SMUN5312DW1T1G
ON Semiconductor

SMUN5312DW1T1G

Teilbestand: 126786

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
MUN5333DW1T1G
ON Semiconductor

MUN5333DW1T1G

Teilbestand: 124275

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5114DW1T1
ON Semiconductor

MUN5114DW1T1

Teilbestand: 1502

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC123JDXV6T1
ON Semiconductor

NSBC123JDXV6T1

Teilbestand: 1414

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC124EPDXV6T1
ON Semiconductor

NSBC124EPDXV6T1

Teilbestand: 1455

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
NSBA143TDXV6T1
ON Semiconductor

NSBA143TDXV6T1

Teilbestand: 1435

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBC143TDXV6T1
ON Semiconductor

NSBC143TDXV6T1

Teilbestand: 1400

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSVMUN531335DW1T1G
ON Semiconductor

NSVMUN531335DW1T1G

Teilbestand: 161762

Transistortyp: 1 NPN Pre-Biased, 1 PNP, Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSVMUN5212DW1T1G
ON Semiconductor

NSVMUN5212DW1T1G

Teilbestand: 111873

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
NSTB60BDW1T1G
ON Semiconductor

NSTB60BDW1T1G

Teilbestand: 116194

Transistortyp: 1 NPN Pre-Biased, 1 PNP, Strom - Kollektor (Ic) (Max): 150mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V,

Wunschzettel
NSBC113EPDXV6T1G
ON Semiconductor

NSBC113EPDXV6T1G

Teilbestand: 191549

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 1 kOhms, Widerstand - Emitterbasis (R2): 1 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Wunschzettel
NSBA143ZDXV6T1G
ON Semiconductor

NSBA143ZDXV6T1G

Teilbestand: 13232

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC143ZPDXV6T5G
ON Semiconductor

NSBC143ZPDXV6T5G

Teilbestand: 1414

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
SMUN5335DW1T2G
ON Semiconductor

SMUN5335DW1T2G

Teilbestand: 183726

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5232DW1T1G
ON Semiconductor

MUN5232DW1T1G

Teilbestand: 132657

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

Wunschzettel
MUN5116DW1T1
ON Semiconductor

MUN5116DW1T1

Teilbestand: 3233

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSVUMC3NT1G
ON Semiconductor

NSVUMC3NT1G

Teilbestand: 183136

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wunschzettel
NSBA144EDXV6T5
ON Semiconductor

NSBA144EDXV6T5

Teilbestand: 1491

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC115TPDP6T5G
ON Semiconductor

NSBC115TPDP6T5G

Teilbestand: 193516

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 100 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel