FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V, Stromaufnahme (Id) - Max: 10mA, Spannung - Cutoff (VGS aus) @ Id: 180mV @ 1µA,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 750mV @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Stromaufnahme (Id) - Max: 10mA, Spannung - Cutoff (VGS aus) @ Id: 180mV @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 300mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 60µA @ 10V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 1.5V @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 600mV @ 100µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 10nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 2.3V @ 1µA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1µA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 10V, Stromaufnahme (Id) - Max: 10mA, Spannung - Cutoff (VGS aus) @ Id: 180mV @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 10V, Stromaufnahme (Id) - Max: 10mA, Spannung - Cutoff (VGS aus) @ Id: 180mV @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 600mV @ 100µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 15V, Strom - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V, Stromaufnahme (Id) - Max: 50mA, Spannung - Cutoff (VGS aus) @ Id: 600mV @ 100µA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1µA,
FET-Typ: N-Channel, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 5mA @ 10V, Stromaufnahme (Id) - Max: 20mA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 35V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1.8V @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 35V, Drain-Source-Spannung (Vdss): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V,
FET-Typ: P-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 1V @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 30V, Strom - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V,