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Transistoren - Bipolar (BJT) - Arrays, vorgespannt

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  • Transistoren - Bipolar (BJT) - Arrays, vorgespannt
NSBA143ZDP6T5G
ON Semiconductor

NSBA143ZDP6T5G

Teilbestand: 126178

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC114YPDXV6T1
ON Semiconductor

NSBC114YPDXV6T1

Teilbestand: 1451

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC114TPDXV6T1
ON Semiconductor

NSBC114TPDXV6T1

Teilbestand: 1441

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBC114EDXV6T1
ON Semiconductor

NSBC114EDXV6T1

Teilbestand: 1483

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wunschzettel
NSBC123EDXV6T1G
ON Semiconductor

NSBC123EDXV6T1G

Teilbestand: 51685

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 2.2 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA123JDXV6T1G
ON Semiconductor

NSBA123JDXV6T1G

Teilbestand: 3224

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
EMF5XV6T5
ON Semiconductor

EMF5XV6T5

Teilbestand: 5392

Transistortyp: 1 NPN Pre-Biased, 1 PNP, Strom - Kollektor (Ic) (Max): 100mA, 500mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, 12V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V,

Wunschzettel
NSBC123JPDXV6T1G
ON Semiconductor

NSBC123JPDXV6T1G

Teilbestand: 150122

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC124EDXV6T5G
ON Semiconductor

NSBC124EDXV6T5G

Teilbestand: 158612

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
NSVB143TPDXV6T1G
ON Semiconductor

NSVB143TPDXV6T1G

Teilbestand: 118474

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
NSBC115EPDXV6T1G
ON Semiconductor

NSBC115EPDXV6T1G

Teilbestand: 423

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 100 kOhms, Widerstand - Emitterbasis (R2): 100 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBA114YDXV6T1
ON Semiconductor

NSBA114YDXV6T1

Teilbestand: 1458

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBA144WDXV6T1G
ON Semiconductor

NSBA144WDXV6T1G

Teilbestand: 112545

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC114TDXV6T5G
ON Semiconductor

NSBC114TDXV6T5G

Teilbestand: 140654

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
UMA6NT1
ON Semiconductor

UMA6NT1

Teilbestand: 1476

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wunschzettel
SMUN5114DW1T1G
ON Semiconductor

SMUN5114DW1T1G

Teilbestand: 172445

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBC124XPDXV6T5G
ON Semiconductor

NSBC124XPDXV6T5G

Teilbestand: 1491

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
EMD5DXV6T1G
ON Semiconductor

EMD5DXV6T1G

Teilbestand: 3186

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, 47 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

Wunschzettel
NSBC143EPDXV6T1
ON Semiconductor

NSBC143EPDXV6T1

Teilbestand: 1462

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

Wunschzettel
MUN5334DW1T1G
ON Semiconductor

MUN5334DW1T1G

Teilbestand: 1472

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
MUN5234DW1T1
ON Semiconductor

MUN5234DW1T1

Teilbestand: 1434

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
EMG2DXV5T1
ON Semiconductor

EMG2DXV5T1

Teilbestand: 1505

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSB13211DW6T1G
ON Semiconductor

NSB13211DW6T1G

Teilbestand: 3211

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, 10 kOhms, Widerstand - Emitterbasis (R2): 4.7 kOhms, 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V,

Wunschzettel
NSVUMC5NT2G
ON Semiconductor

NSVUMC5NT2G

Teilbestand: 151655

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

Wunschzettel
MUN5312DW1T1G
ON Semiconductor

MUN5312DW1T1G

Teilbestand: 189298

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
NSBC143ZDXV6T1G
ON Semiconductor

NSBC143ZDXV6T1G

Teilbestand: 189558

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
UMC2NT1G
ON Semiconductor

UMC2NT1G

Teilbestand: 1438

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel
EMD4DXV6T5G
ON Semiconductor

EMD4DXV6T5G

Teilbestand: 147880

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel
NSBA124EDP6T5G
ON Semiconductor

NSBA124EDP6T5G

Teilbestand: 21627

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel