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Transistoren - Bipolar (BJT) - Arrays, vorgespannt

NSBC143ZDXV6T1G
ON Semiconductor

NSBC143ZDXV6T1G

Teilbestand: 189558

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel.
UMC2NT1G
ON Semiconductor

UMC2NT1G

Teilbestand: 1438

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel.
EMD4DXV6T5G
ON Semiconductor

EMD4DXV6T5G

Teilbestand: 147880

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, 10 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel.
NSBA124EDP6T5G
ON Semiconductor

NSBA124EDP6T5G

Teilbestand: 21627

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 22 kOhms, Widerstand - Emitterbasis (R2): 22 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wunschzettel.
DMC566030R
Panasonic Electronic Components

DMC566030R

Teilbestand: 104386

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel.
XP0111F00L
Panasonic Electronic Components

XP0111F00L

Teilbestand: 3235

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, Widerstand - Emitterbasis (R2): 2.2 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

Wunschzettel.
XP0411300L
Panasonic Electronic Components

XP0411300L

Teilbestand: 1405

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 47 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wunschzettel.
DCX123JK-7-F
Diodes Incorporated

DCX123JK-7-F

Teilbestand: 127975

Transistortyp: 1 NPN, 1 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 2.2 kOhms, Widerstand - Emitterbasis (R2): 47 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wunschzettel.
DDC143TU-7
Diodes Incorporated

DDC143TU-7

Teilbestand: 1466

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Wunschzettel.
IMB11AT110
Rohm Semiconductor

IMB11AT110

Teilbestand: 145889

Transistortyp: 2 PNP - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 10 kOhms, Widerstand - Emitterbasis (R2): 10 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Wunschzettel.
UMH3NTN
Rohm Semiconductor

UMH3NTN

Teilbestand: 152629

Transistortyp: 2 NPN - Pre-Biased (Dual), Strom - Kollektor (Ic) (Max): 100mA, Spannung - Kollektor-Emitter-Durchbruch (max.): 50V, Widerstand - Basis (R1): 4.7 kOhms, DC-Stromverstärkung (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Wunschzettel.