FET-Typ: 4 N-Channel (H-Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 500V, Strom - Dauerentnahme (Id) bei 25°C: 31A, Rds On (Max) @ ID, Vgs: 220 mOhm @ 19A, 10V, Vgs(th) (Max) @ ID: 6V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 280mA, Rds On (Max) @ ID, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 180mA, Rds On (Max) @ ID, Vgs: 6 Ohm @ 115mA, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 230mA, Rds On (Max) @ ID, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs(th) (Max) @ ID: 2V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 280mA, Rds On (Max) @ ID, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 115mA, Rds On (Max) @ ID, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs(th) (Max) @ ID: 2V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 320mA (Ta), Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.4V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 300mA (Ta), Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 320mA, Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.4V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 340mA, Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 300mA, Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 350mA, Rds On (Max) @ ID, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.4V @ 250µA,
FET-Typ: 4 P-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 750mA, Rds On (Max) @ ID, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 4V @ 250µA,
FET-Typ: 4 N-Channel, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 1A, Rds On (Max) @ ID, Vgs: 700 mOhm @ 600mA, 10V, Vgs(th) (Max) @ ID: 4V @ 250µA,
FET-Typ: 2 N Channel (Dual Buck Chopper), FET-Funktion: Super Junction, Drain-Source-Spannung (Vdss): 600V, Strom - Dauerentnahme (Id) bei 25°C: 95A, Rds On (Max) @ ID, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 5mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 300mA, Rds On (Max) @ ID, Vgs: 3 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 55V, Strom - Dauerentnahme (Id) bei 25°C: 3.4A, Rds On (Max) @ ID, Vgs: 105 mOhm @ 3.4A, 10V, Vgs(th) (Max) @ ID: 1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 280mA, Rds On (Max) @ ID, Vgs: 2 Ohm @ 500mA, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 115mA, Rds On (Max) @ ID, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs(th) (Max) @ ID: 2V @ 250µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 3.6V, Vgs(th) (Max) @ ID: 360mV @ 1µA,
FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 270 Ohm @ 5V, Vgs(th) (Max) @ ID: 1.2V @ 10µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.2V, Vgs(th) (Max) @ ID: 220mV @ 1µA,
FET-Typ: 2 N and 2 P-Channel Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 40mA, 16mA, Rds On (Max) @ ID, Vgs: 75 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 10µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 2.7V, Vgs(th) (Max) @ ID: 1.26V @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.9V, Vgs(th) (Max) @ ID: 3.35V @ 1µA,
