FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 4.1A, 3A, Rds On (Max) @ ID, Vgs: 70 mOhm @ 3A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, 2.5V Drive,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ ID, Vgs: 14.4 mOhm @ 10A, 10V, Vgs(th) (Max) @ ID: 2.2V @ 25µA,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 2.8A, Rds On (Max) @ ID, Vgs: 50 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ ID: 1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 6.4A, Rds On (Max) @ ID, Vgs: 36 mOhm @ 15A, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 80A, Rds On (Max) @ ID, Vgs: 1.6 mOhm @ 40A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ ID: 1.3V @ 1mA,
FET-Typ: 2 N-Channel (Dual) Asymmetrical, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 13A, 18A, Rds On (Max) @ ID, Vgs: 10 mOhm @ 13A, 10V, Vgs(th) (Max) @ ID: 2.7V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 700mA, 600mA, Rds On (Max) @ ID, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 25V, Strom - Dauerentnahme (Id) bei 25°C: 680mA, Rds On (Max) @ ID, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Strom - Dauerentnahme (Id) bei 25°C: 4.5A, Rds On (Max) @ ID, Vgs: 65 mOhm @ 15A, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 3.5A, Rds On (Max) @ ID, Vgs: 90 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 40V, Strom - Dauerentnahme (Id) bei 25°C: 10.5A (Ta), 29A (Tc), Rds On (Max) @ ID, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs(th) (Max) @ ID: 2.2V @ 20µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 80V, Strom - Dauerentnahme (Id) bei 25°C: 11A, Rds On (Max) @ ID, Vgs: 8.2 mOhm @ 11A, 10V, Vgs(th) (Max) @ ID: 4V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, 2.5V Drive,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Rds On (Max) @ ID, Vgs: 126 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ ID: 1V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 40V, Strom - Dauerentnahme (Id) bei 25°C: 6.1A, 5.2A, Rds On (Max) @ ID, Vgs: 26 mOhm @ 6.1A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, 8V, Strom - Dauerentnahme (Id) bei 25°C: 630mA, 775mA, Rds On (Max) @ ID, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 700mA, Rds On (Max) @ ID, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 6 N-Channel (3-Phase Bridge), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 40V, Strom - Dauerentnahme (Id) bei 25°C: 150A, Rds On (Max) @ ID, Vgs: 1.66 mOhm @ 80A, 10V,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 25V, Strom - Dauerentnahme (Id) bei 25°C: 220mA, Rds On (Max) @ ID, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 25V, Strom - Dauerentnahme (Id) bei 25°C: 500mA, Rds On (Max) @ ID, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 50V, Strom - Dauerentnahme (Id) bei 25°C: 510mA, Rds On (Max) @ ID, Vgs: 2 Ohm @ 510mA, 10V, Vgs(th) (Max) @ ID: 2.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), Schottky, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 10.3A, 13.3A, Rds On (Max) @ ID, Vgs: 6.5 mOhm @ 10A, 10V, Vgs(th) (Max) @ ID: 2.2V @ 250µA,
FET-Typ: N-Channel, Strom - Dauerentnahme (Id) bei 25°C: 15A (Ta), 48A (Tc), Rds On (Max) @ ID, Vgs: 8.9 mOhm @ 25A, 10V, Vgs(th) (Max) @ ID: 2.1V @ 250µA,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 500mA, Rds On (Max) @ ID, Vgs: 780 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 500V, Strom - Dauerentnahme (Id) bei 25°C: 370mA, Rds On (Max) @ ID, Vgs: 6.2 Ohm @ 185mA, 10V, Vgs(th) (Max) @ ID: 4V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 12A, 15A, Rds On (Max) @ ID, Vgs: 10 mOhm @ 12A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 12V, Strom - Dauerentnahme (Id) bei 25°C: 2.5A, Rds On (Max) @ ID, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,