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Transistoren - JFETs

2SK879-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK879-Y(TE85L,F)

Teilbestand: 198791

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK2145-GR(TE85L,F
Toshiba Semiconductor and Storage

2SK2145-GR(TE85L,F

Teilbestand: 405

FET-Typ: 2 N-Channel (Dual), Strom - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,

Wunschzettel
2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage

2SK879-GR(TE85L,F)

Teilbestand: 389

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK208-O(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-O(TE85L,F)

Teilbestand: 342

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK208-GR(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-GR(TE85L,F)

Teilbestand: 340

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK2145-Y(TE85L,F)

Teilbestand: 123563

FET-Typ: 2 N-Channel (Dual), Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,

Wunschzettel
2SK880-BL(TE85L,F)
Toshiba Semiconductor and Storage

2SK880-BL(TE85L,F)

Teilbestand: 403

FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 50V, Strom - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1.5V @ 100nA,

Wunschzettel
2SK880GRTE85LF
Toshiba Semiconductor and Storage

2SK880GRTE85LF

Teilbestand: 100454

FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 50V, Strom - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1.5V @ 100nA,

Wunschzettel
2SK208-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-Y(TE85L,F)

Teilbestand: 407

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK3320-BL(TE85L,F
Toshiba Semiconductor and Storage

2SK3320-BL(TE85L,F

Teilbestand: 9964

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,

Wunschzettel
2SK2145-BL(TE85L,F
Toshiba Semiconductor and Storage

2SK2145-BL(TE85L,F

Teilbestand: 177718

FET-Typ: 2 N-Channel (Dual), Strom - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,

Wunschzettel
2SK208-R(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-R(TE85L,F)

Teilbestand: 9975

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 400mV @ 100nA,

Wunschzettel
2SK3320-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK3320-Y(TE85L,F)

Teilbestand: 3488

FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,

Wunschzettel
2SK880-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK880-Y(TE85L,F)

Teilbestand: 110749

FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 50V, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 1.5V @ 100nA,

Wunschzettel