FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 40V, Drain-Source-Spannung (Vdss): 40V, Strom - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 2.3V @ 1µA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1µA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V, Stromaufnahme (Id) - Max: 1mA, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 1µA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Drain-Source-Spannung (Vdss): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 500mV @ 10nA,
FET-Typ: N-Channel, Strom - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V, Spannung - Cutoff (VGS aus) @ Id: 200mV @ 100nA,
FET-Typ: N-Channel, Spannung - Durchbruch (V(BR)GSS): 25V, Strom - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V, Spannung - Cutoff (VGS aus) @ Id: 3V @ 3nA,
