FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 278A, Rds On (Max) @ ID, Vgs: 5 mOhm @ 125A, 10V, Vgs(th) (Max) @ ID: 4V @ 5mA,
FET-Typ: 2 N-Channel (Dual) Asymmetrical, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 139A, Rds On (Max) @ ID, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Max) @ ID: 4V @ 2.5mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 70A, Rds On (Max) @ ID, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Max) @ ID: 4V @ 1mA,
FET-Typ: 6 N-Channel (3-Phase Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 22A, Rds On (Max) @ ID, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 139A, Rds On (Max) @ ID, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Max) @ ID: 4V @ 2.5mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 78A, Rds On (Max) @ ID, Vgs: 105 mOhm @ 39A, 10V, Vgs(th) (Max) @ ID: 5V @ 10mA,
FET-Typ: 4 N-Channel (H-Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 11A, Rds On (Max) @ ID, Vgs: 960 mOhm @ 9A, 10V, Vgs(th) (Max) @ ID: 5V @ 1mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 43A, Rds On (Max) @ ID, Vgs: 210 mOhm @ 21.5A, 10V, Vgs(th) (Max) @ ID: 5V @ 5mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 22A, Rds On (Max) @ ID, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 19A, Rds On (Max) @ ID, Vgs: 552 mOhm @ 16A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 21A, Rds On (Max) @ ID, Vgs: 480 mOhm @ 18A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 68A, Rds On (Max) @ ID, Vgs: 120 mOhm @ 34A, 10V, Vgs(th) (Max) @ ID: 5V @ 10mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Silicon Carbide (SiC), Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 36A, Rds On (Max) @ ID, Vgs: 270 mOhm @ 18A, 10V, Vgs(th) (Max) @ ID: 5V @ 5mA,
FET-Typ: 6 N-Channel (3-Phase Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 75V, Strom - Dauerentnahme (Id) bei 25°C: 120A, Rds On (Max) @ ID, Vgs: 4.5 mOhm @ 60A, 10V, Vgs(th) (Max) @ ID: 4V @ 1mA,
FET-Typ: 4 N-Channel (H-Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 15A, Rds On (Max) @ ID, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 1mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 15A, Rds On (Max) @ ID, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 1mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 28A, Rds On (Max) @ ID, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 2mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 56A, Rds On (Max) @ ID, Vgs: 75 mOhm @ 28A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 4mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 42A, Rds On (Max) @ ID, Vgs: 100 mOhm @ 21A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 3mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 600V, Strom - Dauerentnahme (Id) bei 25°C: 39A, Rds On (Max) @ ID, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 2.7mA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 600V, Strom - Dauerentnahme (Id) bei 25°C: 72A, Rds On (Max) @ ID, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 5.4mA,
FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 600V, Strom - Dauerentnahme (Id) bei 25°C: 39A, Rds On (Max) @ ID, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 2.7mA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 7.2A, Rds On (Max) @ ID, Vgs: 20 mOhm @ 7.2A, 4.5V, Vgs(th) (Max) @ ID: 1.5V @ 250µA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Rds On (Max) @ ID, Vgs: 24 mOhm @ 7A, 10V, Vgs(th) (Max) @ ID: 1V @ 250µA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 6A, Rds On (Max) @ ID, Vgs: 26 mOhm @ 6.8A, 4.5V, Vgs(th) (Max) @ ID: 1.1V @ 250µA,
FET-Typ: N and P-Channel, Common Drain, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 40V, Strom - Dauerentnahme (Id) bei 25°C: 8A, Rds On (Max) @ ID, Vgs: 33 mOhm @ 8A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: 2 P-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 12V, Rds On (Max) @ ID, Vgs: 18 mOhm @ 7A, 4.5V, Vgs(th) (Max) @ ID: 1V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 900mA, 600mA, Rds On (Max) @ ID, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs(th) (Max) @ ID: 900mV @ 250µA,
FET-Typ: 2 N-Channel (Dual) Common Drain, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 20V, Strom - Dauerentnahme (Id) bei 25°C: 4A, Rds On (Max) @ ID, Vgs: 32 mOhm @ 5A, 4.5V, Vgs(th) (Max) @ ID: 1.2V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Strom - Dauerentnahme (Id) bei 25°C: 11A, 8A, Rds On (Max) @ ID, Vgs: 12.5 mOhm @ 11A, 10V, Vgs(th) (Max) @ ID: 2.1V @ 250µA,
FET-Typ: 2 N-Channel (Dual), FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 60V, Rds On (Max) @ ID, Vgs: 25 mOhm @ 6.3A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Rds On (Max) @ ID, Vgs: 24 mOhm @ 7.7A, 10V, Vgs(th) (Max) @ ID: 3V @ 250µA,
FET-Typ: N and P-Channel, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 30V, Rds On (Max) @ ID, Vgs: 24 mOhm @ 7.4A, 10V, Vgs(th) (Max) @ ID: 2.6V @ 250µA,
