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Transistoren - FETs, MOSFETs - Arrays

APTM20AM08FTG
Microsemi Corporation

APTM20AM08FTG

Teilbestand: 774

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Strom - Dauerentnahme (Id) bei 25°C: 208A, Rds On (Max) @ ID, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Max) @ ID: 5V @ 5mA,

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APTC80A15SCTG
Microsemi Corporation

APTC80A15SCTG

Teilbestand: 987

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 800V, Strom - Dauerentnahme (Id) bei 25°C: 28A, Rds On (Max) @ ID, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 2mA,

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APTM10DHM05G
Microsemi Corporation

APTM10DHM05G

Teilbestand: 750

FET-Typ: 2 N-Channel (Dual) Asymmetrical, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 100V, Strom - Dauerentnahme (Id) bei 25°C: 278A, Rds On (Max) @ ID, Vgs: 5 mOhm @ 125A, 10V, Vgs(th) (Max) @ ID: 4V @ 5mA,

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APTM50HM75STG
Microsemi Corporation

APTM50HM75STG

Teilbestand: 723

FET-Typ: 4 N-Channel (H-Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 500V, Strom - Dauerentnahme (Id) bei 25°C: 46A, Rds On (Max) @ ID, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,

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APTM20AM04FG
Microsemi Corporation

APTM20AM04FG

Teilbestand: 346

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 200V, Strom - Dauerentnahme (Id) bei 25°C: 372A, Rds On (Max) @ ID, Vgs: 5 mOhm @ 186A, 10V, Vgs(th) (Max) @ ID: 5V @ 10mA,

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APTC60AM18SCG
Microsemi Corporation

APTC60AM18SCG

Teilbestand: 415

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 600V, Strom - Dauerentnahme (Id) bei 25°C: 143A, Rds On (Max) @ ID, Vgs: 18 mOhm @ 71.5A, 10V, Vgs(th) (Max) @ ID: 3.9V @ 4mA,

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APTM100A13SG
Microsemi Corporation

APTM100A13SG

Teilbestand: 445

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 65A, Rds On (Max) @ ID, Vgs: 156 mOhm @ 32.5A, 10V, Vgs(th) (Max) @ ID: 5V @ 6mA,

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APTM50AM24SG
Microsemi Corporation

APTM50AM24SG

Teilbestand: 446

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 500V, Strom - Dauerentnahme (Id) bei 25°C: 150A, Rds On (Max) @ ID, Vgs: 28 mOhm @ 75A, 10V, Vgs(th) (Max) @ ID: 5V @ 6mA,

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APTMC120AM55CT1AG
Microsemi Corporation

APTMC120AM55CT1AG

Teilbestand: 412

FET-Typ: 2 N-Channel (Half Bridge), FET-Funktion: Silicon Carbide (SiC), Drain-Source-Spannung (Vdss): 1200V (1.2kV), Strom - Dauerentnahme (Id) bei 25°C: 55A (Tc), Rds On (Max) @ ID, Vgs: 49 mOhm @ 40A, 20V, Vgs(th) (Max) @ ID: 2.2V @ 2mA (Typ),

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ALD110902SAL
Advanced Linear Devices Inc.

ALD110902SAL

Teilbestand: 21932

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.2V, Vgs(th) (Max) @ ID: 220mV @ 1µA,

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ALD210800SCL
Advanced Linear Devices Inc.

ALD210800SCL

Teilbestand: 17949

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 80mA, Rds On (Max) @ ID, Vgs: 25 Ohm, Vgs(th) (Max) @ ID: 20mV @ 10µA,

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ALD114804APCL
Advanced Linear Devices Inc.

ALD114804APCL

Teilbestand: 14870

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 3.6V, Vgs(th) (Max) @ ID: 380mV @ 1µA,

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ALD310700APCL
Advanced Linear Devices Inc.

ALD310700APCL

Teilbestand: 13522

FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 20mV @ 1µA,

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ALD212900PAL
Advanced Linear Devices Inc.

ALD212900PAL

Teilbestand: 23559

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 80mA, Rds On (Max) @ ID, Vgs: 14 Ohm, Vgs(th) (Max) @ ID: 20mV @ 20µA,

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ALD110800APCL
Advanced Linear Devices Inc.

ALD110800APCL

Teilbestand: 15218

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4V, Vgs(th) (Max) @ ID: 10mV @ 1µA,

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ALD210800APCL
Advanced Linear Devices Inc.

ALD210800APCL

Teilbestand: 15066

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 80mA, Rds On (Max) @ ID, Vgs: 25 Ohm, Vgs(th) (Max) @ ID: 10mV @ 10µA,

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ALD310708SCL
Advanced Linear Devices Inc.

ALD310708SCL

Teilbestand: 17113

FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 780mV @ 1µA,

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ALD110900ASAL
Advanced Linear Devices Inc.

ALD110900ASAL

Teilbestand: 17725

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4V, Vgs(th) (Max) @ ID: 10mV @ 1µA,

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ALD1103SBL
Advanced Linear Devices Inc.

ALD1103SBL

Teilbestand: 17011

FET-Typ: 2 N and 2 P-Channel Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 40mA, 16mA, Rds On (Max) @ ID, Vgs: 75 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 10µA,

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ALD110900APAL
Advanced Linear Devices Inc.

ALD110900APAL

Teilbestand: 17727

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4V, Vgs(th) (Max) @ ID: 10mV @ 1µA,

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ALD110914SAL
Advanced Linear Devices Inc.

ALD110914SAL

Teilbestand: 25345

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.4V, Vgs(th) (Max) @ ID: 1.42V @ 1µA,

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ALD1117SAL
Advanced Linear Devices Inc.

ALD1117SAL

Teilbestand: 27705

FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 1800 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD110814SCL
Advanced Linear Devices Inc.

ALD110814SCL

Teilbestand: 20011

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.4V, Vgs(th) (Max) @ ID: 1.42V @ 1µA,

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ALD1101SAL
Advanced Linear Devices Inc.

ALD1101SAL

Teilbestand: 18884

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 75 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 10µA,

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ALD1101PAL
Advanced Linear Devices Inc.

ALD1101PAL

Teilbestand: 18832

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 75 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 10µA,

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ALD110908ASAL
Advanced Linear Devices Inc.

ALD110908ASAL

Teilbestand: 20498

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Max) @ ID: 810mV @ 1µA,

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ALD1105SBL
Advanced Linear Devices Inc.

ALD1105SBL

Teilbestand: 23424

FET-Typ: 2 N and 2 P-Channel Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD1115PAL
Advanced Linear Devices Inc.

ALD1115PAL

Teilbestand: 27731

FET-Typ: N and P-Channel Complementary, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 1800 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD1102PAL
Advanced Linear Devices Inc.

ALD1102PAL

Teilbestand: 18849

FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 270 Ohm @ 5V, Vgs(th) (Max) @ ID: 1.2V @ 10µA,

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ALD1117PAL
Advanced Linear Devices Inc.

ALD1117PAL

Teilbestand: 27717

FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 1800 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD114835SCL
Advanced Linear Devices Inc.

ALD114835SCL

Teilbestand: 17031

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 540 Ohm @ 0V, Vgs(th) (Max) @ ID: 3.45V @ 1µA,

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ALD1101ASAL
Advanced Linear Devices Inc.

ALD1101ASAL

Teilbestand: 12357

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 75 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 10µA,

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ALD1116PAL
Advanced Linear Devices Inc.

ALD1116PAL

Teilbestand: 27729

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD1106PBL
Advanced Linear Devices Inc.

ALD1106PBL

Teilbestand: 23410

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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ALD111933SAL
Advanced Linear Devices Inc.

ALD111933SAL

Teilbestand: 23136

FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.9V, Vgs(th) (Max) @ ID: 3.35V @ 1µA,

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ALD1106SBL
Advanced Linear Devices Inc.

ALD1106SBL

Teilbestand: 23429

FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,

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