FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Max) @ ID: 820mV @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4V, Vgs(th) (Max) @ ID: 20mV @ 1µA,
FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 270 Ohm @ 5V, Vgs(th) (Max) @ ID: 1.2V @ 10µA,
FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 180mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 80mA, Vgs(th) (Max) @ ID: 20mV @ 10µA,
FET-Typ: 2 P-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 2.7V, Vgs(th) (Max) @ ID: 1.26V @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1.01V @ 1µA,
FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 380mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 3.6V, Vgs(th) (Max) @ ID: 380mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Max) @ ID: 820mV @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5V, Vgs(th) (Max) @ ID: 1.01V @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Logic Level Gate, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 80mA, Vgs(th) (Max) @ ID: 20mV @ 10µA,
FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 20mV @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Max) @ ID: 810mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Max) @ ID: 810mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.4V, Vgs(th) (Max) @ ID: 420mV @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 3.6V, Vgs(th) (Max) @ ID: 380mV @ 1µA,
FET-Typ: 4 P-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 8V, Vgs(th) (Max) @ ID: 780mV @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.4V, Vgs(th) (Max) @ ID: 1.42V @ 1µA,
FET-Typ: N and P-Channel Complementary, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 1800 Ohm @ 5V, Vgs(th) (Max) @ ID: 1V @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4V, Vgs(th) (Max) @ ID: 20mV @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 500 Ohm @ 5.4V, Vgs(th) (Max) @ ID: 1.42V @ 1µA,
FET-Typ: 2 N-Channel (Dual) Matched Pair, FET-Funktion: Depletion Mode, Drain-Source-Spannung (Vdss): 10.6V, Strom - Dauerentnahme (Id) bei 25°C: 12mA, 3mA, Rds On (Max) @ ID, Vgs: 540 Ohm @ 0V, Vgs(th) (Max) @ ID: 3.45V @ 1µA,
FET-Typ: 4 N-Channel, Matched Pair, FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 10.6V, Rds On (Max) @ ID, Vgs: 500 Ohm @ 4.2V, Vgs(th) (Max) @ ID: 220mV @ 1µA,
FET-Typ: 4 N-Channel (H-Bridge), FET-Funktion: Standard, Drain-Source-Spannung (Vdss): 1000V (1kV), Strom - Dauerentnahme (Id) bei 25°C: 18A, Rds On (Max) @ ID, Vgs: 540 mOhm @ 9A, 10V, Vgs(th) (Max) @ ID: 5V @ 2.5mA,
